微纳加工（半导体制造工艺）瑞士联邦理工学院

本课程将在超净环境中向大家展示最有效的集成电路制造工艺，以教授半导体制造的基本原理和流程。

• 课时1：Teaser (3分19秒)

• 课时2：Successful MEMS products：accelerometer (8分56秒)

• 课时3：Successful MEMS products：microphone (4分42秒)

• 课时4：Successful MEMS products：BAW (9分49秒)

• 课时5：Case study：thermomechanical microactuator (14分51秒)

• 课时6：Cleanroom basics：introducing the issue of contamination (13分10秒)

• 课时7：Cleanroom basics：cleanroom strategy (5分56秒)

• 课时8：Basic principles of CVD and CVD reactors (14分14秒)

• 课时9：CVD techniques at different operating pressure plasmaenhanced CVD and me (12分9秒)

• 课时10：Atomic layer CVD ALD and thermal oxidation of silicon (8分39秒)

• 课时11：Theoretical concepts of gas flow in CVD reactors (9分29秒)

• 课时12：CVD thin film growth model (12分41秒)

• 课时13：Specific CVD processes for siliconbased materials and diamond (15分26秒)

• 课时14：Thermal oxidation processes of silicon and ALD deposition of specific oxid (12分12秒)

• 课时15：Thermal evaporation：introduction and vapor creation (12分33秒)

• 课时16：Thermal evaporation：film formation and examples (10分32秒)

• 课时17：Thermal evaporation in CMi (3分27秒)

• 课时18：Sputtering：introduction and plasma formation (8分22秒)

• 课时19：Sputtering：spatial zones and Paschen law (6分22秒)

• 课时20：Sputtering：DC RF magnetron (9分57秒)

• 课时21：Sputtering：ion target interactions (6分25秒)

• 课时22：Sputtering：film growth and control parameters (8分18秒)

• 课时23：Sputtering：examples (11分40秒)

• 课时24：Sputtering in CMi (2分41秒)

• 课时25：SUPPLEMENTARY Other PVD methods (19分41秒)

• 课时26：Film growth：atoms arrival and adhesion (6分48秒)

• 课时27：Film growth：stress in thin films (9分14秒)

• 课时28：SUPPLEMENTARY Film growth：growth modes and crystal structure (10分43秒)

• 课时29：Introduction to lithography (6分40秒)

• 课时30：Resist properties and exposure methods (12分22秒)

• 课时31：SUPPLEMENTARY Photoresist sensitivity and modulation transfer function (4分6秒)

• 课时32：UV lithography：direct writing and mask writing (11分21秒)

• 课时33：UV lithography in CMi：mask fabrication (3分49秒)

• 课时34：UV lithography：mask based lithography (9分33秒)

• 课时35：UV lithography in CMi：mask based lithography (3分2秒)

• 课时36：Electron beam lithography：tool overview (10分19秒)

• 课时37：Electron beam lithography：electron optics and beam deflection (5分6秒)

• 课时38：SUPPLEMENTARY Electron beam lithography：tool overview II (5分27秒)

• 课时39：SUPPLEMENTARY Electron beam lithography：design preparation and fracture (13分25秒)

• 课时40：Electron beam lithography：electronsample interactions (9分59秒)

• 课时41：Electron beam lithography：resists (5分53秒)

• 课时42：SUPPLEMENTARY Electron beam lithography：proximity effect (9分6秒)

• 课时43：Alternative patterning methods：scanning probe lithography (7分50秒)

• 课时44：SUPPLEMENTARY Alternative patterning methods：replication methods (16分17秒)

• 课时45：Dry etching in a gas plasma：etching anisotropy (16分13秒)

• 课时46：Deep dry etching of silicon dry etching without a plasma (15分40秒)

• 课时47：Theoretical concepts of plasma generation (13分12秒)

• 课时48：Types of dry etching equipment and plasma sources (16分50秒)

• 课时49：Ion beam etching (7分25秒)

• 课时50：Examples of etching processes for Sibased materials (22分18秒)

• 课时51：Examples of etching processes for organic films and metals (23分33秒)

• 课时52：Anisotropic and isotropic wet etching of Si and applications (14分45秒)

• 课时53：HF bath for SiO2 and glass wet etching (12分27秒)

• 课时54：Isotropic wet etching of silicon in the HNA bath (19分20秒)

• 课时55：Anisotropic wet etching of silicon in alkaline baths (18分2秒)

• 课时56：Etch stop techniques for thin membrane microfabrication and bulk micromach (13分48秒)

• 课时57：Supercritical drying for realization of suspended structures test microst (12分32秒)

• 课时58：Optical microscopy：inspection and dimension measurement (9分48秒)

• 课时59：Optical thin film thickness measurement (7分6秒)

• 课时60：Optical surface profile measurement (9分27秒)

• 课时61：Mechanical surface profile measurement (9分5秒)

• 课时62：Scanning electron microscopy (10分45秒)

• 课时63：Focused ion beam：local cross sectional inspection and measurement (6分45秒)

• 课时64：Electrical characterization (7分33秒)